i-nanometer silicon carbide/ Nano SiC(SiC 40nm 99.9%)
Izici eziyinhloko ze i-nanometer silicon carbide, i-ultra-fine silicon carbide powder elungiselelwe ngenqubo ekhethekile enobumsulwa obuphakeme, uhla lokusabalalisa usayizi wezinhlayiyana ezincane, indawo ethile ephezulu; I-nano silicon carbide inezindawo zamakhemikhali ezizinzile, ukuguquguquka kokushisa okuphezulu (165W/MK), i-coefficient of thermal expansion encane, ukuqina okuphezulu, ukuqina kwe-Mohs kwe-9.5, ukuqina kwe-microhardness 2840 ~ 3320kg/mm2 Okokuqala kuzo zonke izinto ezigqoka izithasiselo, ukuqina kwayo phakathi i-corundum nedayimane, amandla emishini aphakeme kune-corundum; I-nano silicon carbide ine-conductivity enhle kakhulu yokushisa, noma i-semiconductor, ukushisa okuphezulu kwe-anti-oxidation; I-nano silicon carbide engagugi, ukumelana nokushisa okuphezulu, ukugqwala, i-asidi ne-alkali solvent, esetshenziswa kakhulu kumapende, penda ngaphakathi, yandisa ukumelana nokugqokwa.
1. Izinto eziguquliwe zamandla enayiloni aphakeme: i-nano-SiC powder ezihlanganisweni ze-polymer inokuhambisana okuhle, ukuhlakazeka okuhle, kanye ne-substrate, amandla aqinile aguquliwe enayiloni anamandla kune-PA6 evamile akhuphuke ngo-150%, ukumelana nokugqoka kukhuphuke izikhathi ezingaphezu kwezintathu.Ikakhulukazi esetshenziselwa izimoto ezilandelwayo ze-armored izingxenye ze-polymer, izingxenye zokuqondisa, imishini yendwangu, imishini yezimayini, ama-linings, izingxenye zesitimela zingafinyelela ekushiseni okuphansi kwe-sintering;
2. Ukuguqulwa kwepulasitiki ekhethekile yobunjiniyela be-polyether ether ketone (PEEK) ukumelana nokugqoka: ukwelashwa kwe-nano silicon carbide ebusweni ngemuva kwenkampani, ukwengeza u-5% noma kunjalo, kungathuthukisa kakhulu futhi kuthuthukise ukumelana nokugqokwa kwe-PEEK futhi (ukuthuthukisa okwangempela kuka-30 %);
3. I-nm silicon carbide ethayini lenjoloba: i-nano silicon carbide, engeza cishe u-2% ngaphansi kwesisekelo ayishintshi ukuguqulwa kwefomula yeglue yasekuqaleni, ngaphandle kokubeka engcupheni ukusebenza kwayo kwasekuqaleni nekhwalithi, ukumelana nokugqoka kunganyuswa ngo-20% -40% . Ngaphezu kwalokho, i-silicon carbide engu-40 nm esetshenziswa ku-roller yerabha, ukugqoka ifilimu ye-printer fuser, ukushisa, izinga lokushisa neminye imikhiqizo yerabha;
4. indawo yensimbi eyinhlanganisela ye-nano-SiC: izinhlayiya ezixubene zezinhlayiya ze-nanoscale, insimbi ye-nickel matrix, indawo yensimbi ukuze yakhe ukuminyana okuphezulu, ukubopha okuhle kakhulu kwenhlanganisela eyinhlanganisela ye-electrodeposited, ingaphezulu lensimbi elinokuqina kakhulu (ukuguga) kanye ne-antifriction self- ukugcoba izici zokushisa okuphezulu. Ukuqina kwe-Microhardness ye-coating eyinhlanganisela kuthuthukisa kakhulu ukumelana nokugqoka kukhuphuka izikhathi ezingu-2-3, impilo yesevisi ikhuphuke izikhathi ezingu-3-5, ukumboza kanye namandla okubopha i-substrate kukhuphuke ngo-40%, ikhono lokumboza, ukumboza okufanayo, okubushelelezi, okuningiliziwe; Ezinye izinhlelo zokusebenza ezinhlanu: izitsha zobumba ezisebenza kahle kakhulu (njengama rocket nozzles, imboni yenuzi, njll.), izibambisi, amafutha angagqoki, amabhuleki asebenza kahle kakhulu, ukuqina okuphezulu kanye nempushana engagqoki, ukuqiniswa kwenhlanganisela ye-ceramic kanye nokuqina, njll.;
imboni ye-aerospace isakhiwo sokumboza, ukunamathela okusebenzayo, ukunamathela okuvikelayo, izinto ezimuncayo, izinto eziyimfihlo, njll.;
izikhali zokuzivikela zamathangi nezimoto ezihlomile; amathuluzi okusika e-ceramic, amathuluzi okusika, amathuluzi okulinganisa, isikhunta;
ingasetshenziselwa izinjongo ezikhethekile ze-ceramics yesakhiwo, i-ceramics esebenzayo, i-Engineering Ceramics; ukuthungela; izinto zokushisisa zikagesi zokusetshenziswa ezimbonini, ijeneretha ye-infrared kude.
| Imikhiqizo ihlukaniswa | Imodeli | Isilinganiso sikasayizi wezinhlayiyana (nm) | Ubumsulwa (%) | Indawo ethile engaphezulu (m2/g) | Ukuminyana kwenqwaba (g/cm3) | Ama-Polymorphs | Umbala |
| I-Nanoscale | I-SiC-001 | 40 | >99.9 | 39.8 | 0.11 | Ikhibhu | I-Celadon |
| I-Submicron | I-SiC-002 | 600 kuya ku-800 | >99.5 | 3.20 | 1.52 | Ikhibhu | Okumhlophe okungashoni |
| 1. | I-nanometer silicon carbide / Nano SiC 40nm 99.9% |
| 2. | nano-titanium carbide / Nano TiC 40nm 99.9% |
| 3. | i-nano structured WC Powder/Nano WC 50nm 99.9% |
| 4. | nanometer zirconium carbide/Nano ZrC 50nm 99.9% |
| 5. | I-nano vanadium carbide / Nano VC 50nm 99.9% |
| 6. | I-nano-tantalum carbide / Nano TaC 100nm 99.9% |
| 7. | I-nano-molybdenum carbide/ Nano MoC 80nm 99.9% |
| 8. | nano-chromium carbide / Nano CrC 80nm 99.9% |
