nanometer silicon carbide/ Nano SiC(SiC 40nm 99.9%)
Iimpawu eziphambili ze I-nanometer silicon carbide, i-ultra-fine silicon carbide powder elungiselelwe ngenkqubo ekhethekileyo enobunyulu obuphezulu, uluhlu oluncinci lokusabalalisa ubungakanani, indawo ephezulu ephezulu; I-nano silicon carbide ineempawu ezizinzileyo zeekhemikhali, i-conductivity ephezulu ye-thermal (165W / MK), i-coefficient yokwandiswa kwe-thermal encinci, ubunzima obuphezulu, ubunzima be-Mohs ye-9.5, i-microhardness 2840 ~ 3320kg / mm2 Okokuqala kuzo zonke izixhobo zokugqoka izongezo, ukuqina kwayo phakathi i-corundum kunye nedayimane, amandla omatshini aphezulu kune-corundum; I-nano silicon carbide ine-conductivity egqwesileyo ye-thermal, okanye i-semiconductor, i-anti-oxidation ephezulu yokushisa; I-nano silicon carbide i-resistant-resistant, ukumelana nobushushu obuphezulu, i-corrosion, i-asidi kunye ne-alkali yokunyibilikisa, isetyenziswa ngokubanzi kwiipeyinti, ipeyinti ngaphakathi, inyuse ukuxhathisa ukunxiba.
1. Izinto eziguquliweyo zenayiloni eziphezulu: i-nano-SiC powder kwiimbumba zepolymer zihambelana kakuhle, ukusabalalisa okulungileyo, kunye ne-substrate, ukuguqulwa kwamandla aphezulu e-nylon alloy alloy tensile kune-PA6 eqhelekileyo yanda nge-150%, ukuxhathisa ukunxiba kwanda ngo. ngaphezu kwamaxesha amathathu.Ikakhulu isetyenziselwa izixhobo zepolymer ezixhobileyo, iinxalenye zokuqhuba, oomatshini belaphu, oomatshini bemigodi, iilinings, iinxalenye zikaloliwe zinokufikelela kubushushu obuphantsi be-sintering densification;
2. Ukuguqulwa kweeplastiki ezikhethekileyo zobunjineli be-polyether ether ketone (PEEK) ukuxhathisa ukunxiba: i-nano silicon carbide yonyango emva kwenkampani, ukongeza i-5% okanye kunjalo, inokuphucula kakhulu kwaye ikhulise ukunyanzeliswa kwe-PEEK kunye (ukuphucula i-original engaphezu kwe-30). %);
3. I-nm i-silicon carbide kwivili lerabha: i-nano silicon carbide, yongeza malunga ne-2% phantsi kwesiseko ayitshintshi ukuguqulwa kwefomula yeglue yasekuqaleni, ngaphandle kokuphazamisa ukusebenza kwayo kwasekuqaleni kunye nomgangatho, ukuxhathisa ukunxiba kunokunyuswa ngama-20% -40% . Ukongeza, i-silicon carbide ye-40 nm esetyenziswe kwi-roller yerabha, ifilimu ye-printer fuser ifake ifilimu, ukushisa, ubushushu kunye nezinye iimveliso zerabha;
4. umphezulu wesinyithi i-nano-SiC edibeneyo yokugquma: amasuntswana axubeneyo amasuntswana e-nanoscale, isinyithi se-nickel matrix, umphezulu wesinyithi ukwenza uxinaniso oluphezulu, ukubopha okuhle kakhulu kwe-electrodeposited composite coating, umphezulu wesinyithi onzima kakhulu (ukunxiba) kunye ne-antifriction self- ukuthambisa iimpawu zobushushu obuphezulu. Ubulukhuni be-Microhardness yengubo edibeneyo buphucula kakhulu ukuxhathisa ukunxiba kwanda ngamaxesha angama-2-3, ubomi benkonzo banda ngamaxesha angama-3-5, i-coating kunye ne-substrate yokubopha umthamo yanda ngama-40%, isakhono sokugubungela, iingubo ezifanayo, ezigudileyo, ezineenkcukacha; Ezinye izinto ezihlanu ezisetyenziswayo: iiseramikhi ezikumgangatho ophezulu (ezifana nemilomo yerokhethi, ishishini lenyukliya, njl.njl.), izinto zokufunxa, igrisi yokunganxibi, iibhuleki ezisebenza kakhulu, ubulukhuni obuphezulu kunye nomgubo ongagugiyo, ukomelezwa kweceramic ehlanganisiweyo kunye nokuqina; njl.
Ishishini le-aerospace yesakhiwo sokwaleka, ukutyabeka okusebenzayo, ukutyabeka okukhuselekileyo, izinto ezifunxayo, izinto ezifihlakeleyo, njl. njl.;
izixhobo zokukhusela zamatanki kunye neenqwelo zezixhobo; izixhobo zokusika i-ceramic, izixhobo zokusika, izixhobo zokulinganisa, iimbumba;
ingasetyenziselwa iinjongo ezikhethekileyo zeeseramics zesakhiwo, iiseramics ezisebenzayo, iiCeramics zobuNjineli; Umlilo izinto zokufudumeza zombane zokusetyenziswa kwimizi-mveliso, ijeneretha ekude ye-infrared.
| Iimveliso zihlelwa | Umzekelo | I-avareji yobungakanani bamasuntswana (nm) | Ucoceko (%) | Indawo ethile yomphezulu (m2/ g) | Ubuninzi bobuninzi (g/cm3) | Iipolymorphs | Umbala |
| Nanoscale | SiC-001 | 40 | >99.9 | 39.8 | 0.11 | Ityhubhu | Celadon |
| I-submicron | I-SiC-002 | 600 ukuya 800 | >99.5 | 3.20 | 1.52 | Ityhubhu | Umhlophe ongekho nzulu |
| 1. | nanometer silicon carbide / Nano SiC 40nm 99.9% |
| 2. | nano-titanium carbide / Nano TiC 40nm 99.9% |
| 3. | i-nano eyakhiwe nge-WC Powder/Nano WC 50nm 99.9% |
| 4. | nanometer zirconium carbide/ Nano ZrC 50nm 99.9% |
| 5. | nano vanadium carbide / Nano VC 50nm 99.9% |
| 6. | nano-tantalum carbide / Nano TaC 100nm 99.9% |
| 7. | nano-molybdenum carbide/ Nano MoC 80nm 99.9% |
| 8. | nano-chromium carbide / Nano CrC 80nm 99.9% |
