ibicuruzwa

nano-aluminium nitride / nano AlN 30nm 99.9%

Ibisobanuro bigufi:

nano-aluminium nitride

nano AlN 30nm 99,9%

AlN 30nm 99,9%


Ibicuruzwa birambuye

Ibicuruzwa

Ibisobanuro

Ibintu nyamukuru biranga nano-aluminium nitride ultrafine nitride ya aluminiyumu yateguwe binyuze muburyo budasanzwe, ubuziranenge bwinshi, ingano ntoya, ubuso bwihariye, ibikorwa byubuso, guhindura ubuso bwifu, ntabwo hydrolytique reaction hamwe na ogisijeni iri hasi cyane (

Porogaramu

Gukora insimburangingo yumuzunguruko, ibikoresho bya elegitoroniki, optique, icyuma gishyushya ubushyuhe, ubushyuhe bwo hejuru bwo guhimba matrike yicyuma hamwe n’ibikoresho bishingiye kuri polymer, cyane cyane mubushyuhe bwo hejuru bwo gufunga ibyuma hamwe nibikoresho byo gupakira ibikoresho bya elegitoronike kugirango tunoze imikorere yubushyuhe hamwe nimbaraga ziranga ibikoresho, bifite an porogaramu nziza zishobora gukoreshwa zishobora gusimbuza nitride ya micron ya micron;

Silika ebyiri yubushyuhe hamwe nubushuhe bwa epoxy resin: Nakoze nitride ya nano aluminium nateguwe na ultra-high ubushyuhe bwumuriro wa silicone, ifite ubushyuhe bwiza bwumuriro, amashanyarazi meza cyane, amashanyarazi menshi hamwe nubushyuhe (ubushyuhe bwakazi bwa 80- 250 ° C), guhuzagurika hasi no gukora neza. Ibicuruzwa bigeze kurenza ibicuruzwa bitumizwa mu mahanga, kubera ko bishobora gusimbuza ibicuruzwa bisa bitumizwa mu mahanga bikoreshwa cyane mu bikoresho bya elegitoronike nko guhererekanya ubushyuhe, no kunoza imikorere. Nka CPU hamwe nubushyuhe bwo gutandukanya ubushyuhe, transistor yingufu, thyristor, diode, yumwanya uhuye na substrate mugihe cyo kohereza ubushyuhe. Nano yumuriro wa Nano kugirango wuzuze icyuho kiri hagati ya IC cyangwa transistor hamwe nubushyuhe, byongera aho uhurira hagati yabo kugirango ukonje neza;

3 nano-lubricants hamwe na antiwear antivar: Amavuta ya ceramic ya Nano yongewe mubice byahinduwe nano aluminium nitride ceramic ceramic imbere muri moteri hamwe namavuta yo kwisiga akora kumyanya yo guterana hejuru yicyuma, ubushyuhe bwinshi hamwe nigitutu gikabije birakorwa, kandi kwinjira cyane byinjijwe muri Ubuso bw'icyuma hamwe no gusana microporome byangiritse hejuru yangiritse, gushiraho firime irinda nano-ceramic.Kubera ingaruka zo kwigunga kwa membrane, kugenda ugereranije hagati yubushyamirane buturuka mubice bigira uruhare gusa muriki gice cya firime ikingira, na nano-ceramic Ibice nkibice bito byumupira wo guterana hagati yubukwe bwa gakondo kuva kunyerera gakondo kunyerera mukuzunguruka, bigabanya cyane guterana amagambo, guterana hagati yibice byimuka bigabanuka kugeza kuri zeru bigira ingaruka nziza yo kwirinda kwambara kuri moteri, na kunoza amavuta, bigabanya coefficente yo guterana hejuru ya 80%, kunoza abrasion yo kurenza abarenga 350% hejuru ya 80%, kugabanya kwambara no kurira no kongera ibice byubukanishi ubuzima bwikubye inshuro zirenga eshatu, kugabanya igihe cyo hasi, kubungabunga hasi ibiciro, kongera igihe cyo kuvugurura inshuro zirenga ebyiri, kuzigama ingufu 10% -30%, kongera ingufu z'amashanyarazi kuri 20% -40%, ongeraho ibihumbi bibiri gusa icumi kugeza ku gihumbi; Amashanyarazi menshi yubushyuhe: yahinduwe nano-nitride ya aluminiyumu irashobora kuzamura cyane ubushyuhe bwumuriro wa plastiki. Ibicuruzwa byubushakashatsi kuri 1% byongewe kuri plastiki, kuburyo ubushyuhe bwumuriro wa plastike kuva 0.3 kugeza 3, ubwinshi bwumuriro bwiyongereyeho inshuro zirenga 10. Ikoreshwa cyane muri plastike ya PVC, plastike polyurethane, plastike ya PA, plastike ikora;

Ahandi hantu hashyirwa: nitride ya nano-aluminiyumu irashobora gukoreshwa muburyo bukomeye bwo gushonga ibyuma bidafite fer hamwe nibikoresho bya semiconductor, gallium arsenide, ubwato buguruka, ubwato burinda amashyanyarazi, ubushyuhe bukabije, ibikoresho bya dielectric ya microwave, ubushyuhe bwinshi hamwe no kurwanya ruswa yububiko bwububiko. na aluminium nitride microwave ceramics.

Ibisobanuro

Ibicuruzwa byashyizwe mu byiciro
Icyitegererezo
Impuzandengo y'ibice (nm)
Isuku (%)
Ubuso bwihariye (m2/ g)
Ubucucike bwinshi (g / cm3)
Polimorphs
Ibara
Nanoscale
AlN-001
50
> 99.9
42.0
0.15
Amashyaka atandatu
Icyatsi cyera
Submicron
AlN-002
500
> 99.9
12.9
1.15
Amashyaka atandatu
Icyatsi

 

Ibicuruzwa bifitanye isano

1.

nano-silicon nitride / nano Si3N4 20nm 99.9%

2.

nano-aluminium nitride / nano AlN 30nm 99.9%

3.

nano-titanium nitride / nano TiN 20nm 99.9%

4.

nano boron nitride / nano BN 50nm 99.9%

5.

nano-zirconium nitride / nano ZrN 50nm 99.9%

6.

nano vanadium nitride / nano VN 40nm 99.9%


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